iNIFINITYrf technology has made important progress in the field of gallium nitride (GaN) power chip technology and successfully developed 650V and 1200V GaN FET power chips for POE switch, using 300 W/600W/1 KW PSU modules, which will bring benefits to the power electronics industry. to achieve significant performance improvements and efficiency improvements. Edaton expects to launch 1700V GaN FET in 2025, marking an important step in compound semiconductor technology innovation.

In solar power generation and wind energy conversion systems, it can improve energy conversion efficiency and reduce losses, thereby increasing overall power generation. In terms of data center and server power supplies, it can also reduce energy consumption and cooling requirements, and improve system reliability and performance. In addition, the high reliability and high performance of GaN wafers make them an ideal choice for drivers, power modules and motor control systems in industrial automation equipment. On the consumer electronics side, the size and weight of the charger can be greatly reduced, and charging efficiency can be improved.

iNIFINITYrf has invested in the development of GaN FET components and promoted product applications through industry-university cooperation. It has communicated with university professors in various regions in the north, central and south. Its independently developed 650V and 1200V GaN FETs have received high recognition and support and will be given priority for adoption. Edaton also cooperates with the industry to launch 140W~560W power products, and then develops high-power Inverters and Converters for electric vehicles and solar energy.

iNIFINITYrf Technology was established in 2019. With years of R&D experience, the technical team has successfully overcome many challenges in developing GaN power components. It uses advanced epitaxial growth technology to ensure the high quality and consistency of GaN materials, and optimizes component structure design to achieve lower cost. On-resistance and higher withstand voltage performance.

iNIFINITYrf believes that the widespread application of GaN technology will bring revolutionary changes to the global power electronics industry and promote the development of green energy and high-efficiency technologies. In the future, we will continue to be committed to GaN technology innovation and application, and launch more high-performance GaN power components to meet the needs of customers in different industries.